High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs

The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates significant lattice mismatch. This a primary concern for the integration of mid-infrared active optoelectronic devices low-cost photonic platforms, such as Si. As evidence, an quantum cascade laser structure was grown GaAs substrate, which has large (4%) mismatch respect InP. Prior core growth, metamorphic buffer layer InP directly substrate adjust constant. Wafer characterization data are given establish general material characteristics. A simple fabrication procedure leads peak (>14 W) at room temperature. These results extremely promising direct growth Si substrates.